Twin current bipolar device with hi-lo base profile

ABSTRACT

A bipolar transistor is described whose I-V curve is such that it operates in two regions, one having low gain and low power consumption and another having higher gain and better current driving ability. Said transistor has a base region made up of two sub regions, the region closest to the emitter having a resistivity about an order a magnitude lower than the second region (which interfaces with the collector). A key feature of the invention is that the region closest to the collector is very uniformly doped, i.e. there is no gradient or built-in field present. In order to produce such a region, epitaxial growth along with boron doping is used rather than more conventional techniques such as ion implantation and/or diffusion.

FIELD OF THE INVENTION

The invention relates to the general field of bipolar transistors withparticular reference to the control of base region doping and its effecton the electrical characteristics.

BACKGROUND OF THE INVENTION

As is well known, bipolar transistors, in their most elemental form,comprise a sandwich made up of three layers of semiconducting material,the middle layer being of an opposite conductivity type to the outerlayers. Much work has been done on optimizing both the dimensions of thethree layers as well as determining the best way to distribute dopantswithin them. For example, in the graded-base transistor, first developedover 40 years ago, it was found that the frequency response of atransistor could be increased by providing a built-in field across thebase region to aid the transport of carriers from emitter to collector.In order to produce such field, a resistivity gradient was introducedinto the base material as a natural byproduct of the diffusion process.

In FIG. 1a we show a generalized curve of dopant concentration throughthe crosssection of a transistor. Region 1 of N+ material represents theemitter, region 2 of P type material constitutes the base, and region 3of N type material forms the collector. Each region was originallyformed by using diffusion and/or ion implantation, generally followed bya drive-in diffusion for the purpose of controlling exactly where theinterface occurs. In FIG. 1b we show a typical I-V curve 4 (collectorcurrent vs. collector to emitter voltage) for a device of this sort. Itis evident that, once the knee of the curve has been passed, thecurrent-voltage relationship is linear.

More recently, it has been found that if the base of the device issubdivided into two layers, with the layer closest to the emitter havinglower resistivity, a more complicated relationship between I_(C) and theV_(CE) results. In FIG. 2a, region 21 of P+ material has been introducedclosest to the emitter while region 22 of P type material is the oneclosest to the collector. This results in the I-V curve seen in FIG. 2bwhere the curve is seen to be made up of two distinct parts, 25 and 26.Depending on the applied voltage being used, such a device can operateat low gain, with accompanying low power consumption, or it can beoperated with higher gain and better current driving capability athigher voltages.

As we will show below, the device and method of the present inventionare novel but, nevertheless, there already exists a considerableliterature that is relevant to their review and understanding. Forexample, U.S. Pat. No. 5,213,988 Yamauchi et al.), U.S. Pat. No.4,866,000 (Okita), U.S. Pat. No. 4,347,654 (Allen et al.), and U.S. Pat.No. 5,130,262 (Masuelier et al.) all describe bipolar transistors havingdouble bases comprised of the P+ and P− regions. In U.S. Pat. No.5,480,816 Uga et al. show a bipolar transistor having three base layers,each with a different dopant concentration:- a P+ primary base layer anda secondary base layer made up of a P− and a P layer.

In U.S. Pat. No. 5,569,612 Frisina discloses a process for manufacturinga bipolar transistor. An N type region is first formed by epitaxialgrowth over N+ material following which aluminum ions (boron beingcounter-indicated) are implanted into the epitaxial layer to form alightly doped P base. This is followed by the formation of a P+ basewithin the P base, this time using boron ions.

In U.S. Pat. No. 5,496,746, Matthews shows a bipolar transistor having abase layer comprising a buried P+ layer with an intrinsic base and a P−layer. The method of preparation of this device is quite different fromthat taught by the present invention.

These prior art devices, while having some similarity to the presentinvention, differ significantly in their internal dimensions and dopantconcentrations and therefore provide different I-V curves, breakdownvoltages, etc. from those generated by the present invention.Additionally, the present invention teaches a unique process for themanufacture of the device.

SUMMARY OF THE INVENTION

It has been an object of the present invention to provide a bipolartransistor whose characteristic curve operates in two regions, onehaving low gain and low power consumption and another having higher gainand better current driving ability.

Another object of the invention has been to provide a process formanufacturing said bipolar transistor.

Still another object of the present invention has been that said deviceand said process be entirely compatible with conventional integratedcircuit devices and processes.

These objects have been achieved by providing a bipolar transistorhaving a base region made up of two sub regions, the region closest tothe emitter having a resistivity about an order a magnitude lower thanthe second region (which interfaces with the collector). A key featureof the invention is that the region closest to the collector is veryuniformly doped, i.e. there is no gradient or built-in field present. Inorder to produce such a region, epitaxial growth along with boron dopingis used rather than more conventional techniques such as ionimplantation and/or diffusion.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1a and 1 b are for a conventional bipolar transistor and show therelationship between dopant concentration and distance from the surfacefor the three main zones and the resulting I-V curve that is obtained.

FIGS. 2a and 2 b show similar curves to FIG. 1 for a transistor formedaccording to the process of the present invention.

FIGS. 3-6 Illustrate successive steps in the manufacturing process ofthe present invention.

FIG. 7 is an I-V curve for a device manufactured according to theprocess of the present invention.

FIG. 8 is a plot of dopant concentration as a function of distance belowthe surface for a device manufactured according to the process ofpresent invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

We will disclose the present invention by describing the process usedfor manufacturing the device. Once this has been done the structure ofthe device will become clear. The process begins with the provision ofan N type silicon wafer. Alternatively, the starting point could be an Nwell that had been formed within any silicon wafer.

The first step of the process is the implantation of heavier donor ionssuch as antimony or arsenic into the P type silicon. For this purposeion energies of about 80 keV were used but any energy between about 60and 100 keV would still be satisfactory. The dosage used was betweenabout 1×10¹⁵ and 5×10¹⁵ ions/cm². This was followed by a drive-indiffusion at a temperature between about 1,100 and 1,200° C., with about1,200° C. being preferred, for about 240 minutes, although any timebetween about 180 and 300 minutes would still work. This resulted in theformation of an N+ buried layer between about 3 and 4 microns thick. Atthis stage, the structure has the appearance illustrated in FIG. 3 withN+ buried layer 32 shown between N type layers 31 and 33.

As a special feature and critical step of the process, layer 40 of borondoped silicon is then laid down over layer 33 by means of epitaxialdeposition. This is shown in FIG. 4. Our process for epitaxi wasatmospheric pressure chemical vapor deposition (APCVD) at a temperaturebetween about 1,100 and 1,200° C. to a thickness between about 2.5 and 5microns, with 4 microns being preferred, and the boron was introduced byadding boron. During the epitaxial process the N+ buried layer will updiffuse to form the N region shown as layer 33.

The choice of boron, as opposed to aluminum, for doping layer 40 isbecause of the associated easy control of dosage as well as its fullcompatibility with current manufacturing processes. Epitaxial growth isneeded because it is important that layer 40 be very uniformly doped.Other conventional methods for forming this region, such as ionimplantation, diffusion, etc. lead to non-uniform doping and would notprovide the device with the desired electrical characteristics. Theacceptor concentration in epitaxial layer 40 was between about 4×10¹⁵and 5×10¹⁵ ions/cm³ although any concentration in the range of fromabout 3×10¹⁵ to 6×10¹⁵ ions/cm³ would still be satisfactory. Thiscorresponded to a resistivity between about 30 and 60 ohm cm.

With layer 40 in place, field oxide layer 51 (FIG. 5) is grown on thesurface to a thickness of about 8,500 Angstroms and is then patterned bystandard photolithographic means to form a mask that covers the surfaceexcept at opening 52 so as to define the width of the primary baselayer. Typically, opening 52 measures about 15×25 microns². Boron ionsare then implanted into the wafer to form region 53, the primary baselayer. The ion energies employed at this stage were between about 30 and40 keV, with about 35 keV being preferred. The dosage used was betweenabout 5×10¹² and 1×10¹³ ions/cm². This was followed by a drive-indiffusion at between about 1,000 and 1,100° C. for between about 60 and120 minutes. This resulted in layer 53 having its lower surface locatedbetween about 0.6 and 0.8 microns below the wafer surface.

Following the use of standard photolithography to define the emitterwindow, it was further patterned to define opening 63 which determinedthe surface dimensions of the emitter (typically about 5 by 10 microns).Heavy donor ions such as arsenic were now implanted at an ion energybetween about 60 and 65 keV, with about 60 keV being preferred. Thedosage used was between about 4×10¹⁵ and 7×10¹⁵ ions/cm². This wasfollowed by a drive-in diffusion at between about 950 and 1,000° C. forbetween about 60 and 100 minutes. This resulted in the formation ofemitter layer 64 whose lower surface was between about 0.30 and 0.35microns below the surface.

At this point the process of the present invention terminates with allsubsequent processing such as contact metalization, etc. being standard.Thus, the structure seen in FIG. 6 also represents the structure of thepresent invention and is seen to comprise an N+ emitter 64, a primarybase layer of P+ material 53, a secondary base layer which is uniformlyP type, an N type collector region 33 which is in contact with N+subcollector 32.

The device, formed according to the above process, was found to have theelectrical characteristics shown in the I-V curve of FIG. 7. It isimportant to note that these characteristics are very compatible withthe current and voltage levels employed in integrated circuits. Many ofthe devices described in the prior art are intended for high voltageoperation, often as stand-alone devices, and therefore have differentstructures and electrical characteristics.

The distribution of dopant along a cross-section of a device formedaccording to the teachings of the present invention is illustrated inFIG. 8, starting at the interface between the emitter and the primary(or first) base. As can be seen, the doping level in the primary basepeaks very quickly at a value of about 3×10¹⁶ carriers per cccorresponding to a resistivity of about 0.2 ohm cm. The resistivity thendrops off fairly rapidly to a value of around 2 ohm cm and is thenuniformly maintained over a distance of about 8,000 Angstroms. A rapidfalloff followed by a rise in dopant concentration is then seen as thecollector region is reached.

While the invention has been particularly shown and described withreference to the preferred embodiments thereof, it will be understood bythose skilled in the art that various changes in form and details may bemade without departing from the spirit and scope of the invention.

What is claimed is:
 1. A process for manufacturing a twin gain bipolartransistor, comprising: providing a P type silicon wafer having an uppersurface; implanting first donor ions through said upper surface;performing a first drive-in diffusion thereby forming an N+ buriedcollector that is between about 3 and 4 microns thick and having anupper N-to-N+ interface that is between about 0.8 and 1 microns belowsaid wafer upper surface; depositing a layer of boron doped silicon bymeans of epitaxial growth on said wafer upper surface, thereby forming aP type secondary base layer that contains a uniform distribution ofacceptors and has an upper surface; forming a first oxide layer on saidit epitaxial layer upper surface; patterning the first oxide layer byphotolithography to form a first mask; through said first mask,implanting boron ions; performing a second drive-in diffusion whereby aprimary base layer is formed within the secondary base layer; removingthe first mask; forming a second mask by photolithography on saidepitaxial layer upper surface; patterning to form an emitter mask;through said emitter mask, implanting second donor ions; and performinga third drive-in diffusion whereby an N+ emitter is formed within theprimary base layer.
 2. The process of claim 1 wherein the first donorions are implanted at an energy between about 60 and 100 keV.
 3. Theprocess of claim 1 wherein the implanted dosage of the first donor ionsis between about 1×10¹⁵ and 5×10¹⁵ ions/cm².
 4. The process of claim 1wherein said first drive-in diffusion further comprises heating at atemperature between about 1,100 and 1,200° C. for between about 180 and300 minutes.
 5. The process of claim 1 wherein the epitaxial layer has athickness between about 4 and 5 microns.
 6. The process of claim 1wherein said epitaxial layer has an acceptor concentration between about4×10¹⁵ and 5×10¹⁵ ions/cm³, corresponding to a resistivity between about30 and 60 ohm cm.
 7. The process of claim 1 wherein the implanted boronions have an energy between about 30 and 40 keV and a implanted dosagebetween about 5×10¹² and 1×10¹³ ions/cm².
 8. The process of claim 1wherein the second drive-in diffusion comprises heating at a temperaturebetween about 1,000 and 1,100° C. for between about 60 and 120 minutes.9. The process of claim 1 wherein said primary base layer extends to adepth between about 0.6 and 0.8 microns below the surface of theepitaxial layer.
 10. The process off claim 1 wherein the secondimplanted donor ions have an energy between about 60 and 65 keV and animplanted dosage between about 4×10¹⁵ and 7×10¹⁵ ions/cm².
 11. Theprocess of claim 1 wherein the third drive-in diffusion comprisesheating at a temperature between about 950 and 1,000° C. for betweenabout 60 and 100 minutes.